Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure

Authors

  • Ziwei Cui Space Star Technology CO., LTD., Beijing, China Author

Keywords:

Electronic properties, Wurtzite silicon, Uniaxial pressure

Abstract

Electronic properties of wurtzite silicon  (WZ-Si) are investigated by first-principle calculation. It is  found that WZ-Si is an indirect band-gap semiconductor at  ambient condition. A uniaxial strain along the c-direction can  reduce the direct energy gap at Γ significantly. Calculated  pressure needed to compress WZ-Si is not too high, which  shows strained WZ-Si would be potential in practical use.  The effective mass of electron is found strongly dependent on  strain which could be used to tailor the transport properties. 

 

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Published

2024-03-04

Issue

Vol. 5 No. 2 (2017): International Journal of Innovative Research in Computer Science & Technology(march )2017

Section

Articles

How to Cite

Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure . (2024). International Journal of Innovative Research in Computer Science & Technology, 5(2), 230–233. Retrieved from https://acspublisher.com/journals/index.php/ijircst/article/view/13491