Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure
Keywords:
Electronic properties, Wurtzite silicon, Uniaxial pressureAbstract
Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.
Downloads
References
Liu. J.F, Michel J, Giziewicz M, Pan D, Wada K, Douglas D., Jongthammanurak S, Danielson D, and Kimerling L, Appl. Phys. Lett 87, 103501 (2005)
Leitz C. W, Currie M. T., Lee M L, and Cheng Z.-Y. J. Appl. Phys 92, 3745 (2002)
Kern R, Hoyt J L and J.F. Gibbons, IEEE T Electron Dev 47, 1406 (2000)
Bera, L.K. et al., IEEE Electr Device. L 27, 350 (2006) [5] Wu. S.L, Lin Y M, Chang S, Lu S, Chen P; Liu C, IEEE Electr Device. L 27, 46 (2006)
Jennings H M, Science, 24, 1242 (1976)
Dahmen U, Hetherington C J, Pirouz P and Westmacott K H, Scr. Metall. 23, 269 (1989)
Pirouz P, Chaim R, Dahmen U and Westmacott K H, Acta Metall. Mater. 38, 313 (1990)
Zhang Y, Lqbal Z, Vijayalakshmi S and Grebel H, Appl. Phys. Lett. 75, 2758 (1999)
Zhang J Y, Ono H, Uchida K, Nozaki S and Morisaki H, Phys. Status Solidi B 223, 41 (2001)
Fontcuberta A, Morral I, Arbiol J, Prades J D, Cirera A and Morante J R, Adv. Mater. 19 1347 (2007)
Raffy C, Furthmuller J and Bechstedt F, Phys. Rev. B 66, 075201 (2002)
kackell P, Wenzien B and Bechastedt F, Phys. Rev. B 50, 17037 (1994)
Murayama M and Nakayama T, Phys. Rev. B 49, 4710 (1994)
Rinke P, Scheffler M, Qteish A, Winkelnkemper M and Bimberg D, Appl. Phys. Lett 89, 161919 (2006)
Kresse G and Hafner J, Phys. Rev. B 48, 13115 (1993).
Kresse G and Furthmuller J, Comput. Mater. Sci. 6, 15 (1996).
Kresse G and Furthmuller J, Phys. Rev. B 54, 11169 (1996). [19] Kresse G and Joubert D, Phys. Rev. B 59, 1758 (1999). [20] Blochl P E, Phys. Rev. B 50, 17953 (1994).
Monkhorst H J and Pack J D, Phys, Rev. B 13, 5188 (1976). [22] Yeh C, Lu Z W, Froyen S and Zunger A, Phys, Rev. B 46, 10086 (1992).
Zhang Y, Iqbal Z, Vijayalakshmi S and Grebel H, Appl. Phys. Lett. 75, 2758 (1999)
Hendriks M, Radelaar S, Beers A M and Bloem J, Thin Solid Films 113, 59 (1984)
Wei S-H, Zunger A, Phys. Rev. B 60, 5404 (1999) [26] Camphausen D L, Connell G and Paul W, Phy. Rev. Lett 25, 184 (1971).
Landau L D and Lifschitz E M, Quantum Mechanics, (London, 1959).
Martinez G, Optical Properties of Semiconductors under Pressure, in Handbook on Semiconductors, 2ed. (1980).
