Ferroelectric Domain Walls as Conductive Channels in Ferroelectric Semiconductors
DOI:
https://doi.org/10.48165/Keywords:
Ferroelectric, domain wall, spontaneous, accumulation, coupling, flexoelectric, Jagriti, Archana, RakhiAbstract
We have studied that ferroelectric domain walls act as conductive channels in ferroelectric semiconductors. The static conductivity of domain walls with different incline angle with respect to the spontaneous polarization vector was calculated numerically in the uniaxial ferroelectric semiconductors of n type. The static conductivity drastically increases at the inclined head to head wall by an order of magnitude for small incline angles and by three orders of magnitude for the perpendicular domain wall due to strong accumulation of compensating free charges. We have presented the polarization structure and transport behavior at the domain walls in the multiaxial ferroelectrics like BiFeO3 and Pb(Zr,Ti)O3 determined by the interplay of the strong ferroelectric coupling between polarization components and inhomogeneous elastic strains along the walls. The impact of the ferroelectric coupling, proximity and finite size effect on the polarization vector, potential electric field and carrier redistribution across the thin stripes and cylindrical nanodynamics was analysed. Flexoelectric coupling is high for ferroelectric leads to the appearance of polarization components perpendicular to the wall plane and its strong gradient across the wall and even for unchanged walls. The carrier accumulation effect by the nominally unchanged domain stripes and cylindrical walls appears to be significant and increases upto 10-30 times for domain in Pb(Zr,Ti)O3 for the typical range of flexoelectric coefficients. The charge of accumulated carrier was determined by the sign of the flexoelectric coefficient. We found that the carrier accumulation is highest when the wall plane is perpendicular to the spontaneous polarization direction at wall and it decreases with bound charge decrease and reaches minimum for the parallel domain wall. The obtained results were found in good agreement with previous results.
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